Plasma CVD method
US5340621A · kind A · utility
45Cited by
0References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1993 |
| Grant date | Aug 23, 1994 |
| Priority date | — |
| Expiry date | Mar 23, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma CVD method and the device for generating an arc discharging plasma, together with introducing both a material gas and a reactive gas into a vacuum chamber; coating a substrate with a thin film which contains a material gas component and a reactive gas component, said plasma CVD method comprising the steps of: introducing said material gas into a position between the arc discharging plasma and the substrate; and introducing said reactive gas into a space opposite, relative to the arc discharging plasma, to a side whereinto the material gas is introduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.