Method of forming fine resist pattern
US5340702A · kind A · utility
5Cited by
2References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 1992 |
| Grant date | Aug 23, 1994 |
| Priority date | — |
| Expiry date | Aug 27, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2018
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist pattern is formed by PA1 (a) forming a thick film of a positive photoresist on a substrate, PA1 (b) forming a light-shielding film directly on a surface of the thick film of the positive photoresist, PA1 (c) processing the light-shielding film into a pattern, PA1 (d) exposing the thick film of the positive photoresist to light, and PA1 (e) developing the exposed, thick film of the positive photoresist. According to this method, a thick, fine pattern of a photoresist can be accurately and advantageously formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.