Method for writing to a flash memory array during erase suspend intervals
US5341330A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 1993 |
| Grant date | Aug 23, 1994 |
| Priority date | — |
| Expiry date | Nov 1, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2212/2022
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for writing data to an entry in a portion of a flash EEPROM memory array during a period in which that portion of the array is being erased and writing is prohibited. The method includes writing the data to a new entry position apart from the portion of the array which is being erased along with a revision number which is greater than the revision number of the original data in the original portion of the array, writing of the busy condition of the original entry to a temporary storage position apart from the portion of the array which is being erased, and invalidating entries listed in the temporary storage position when the erase operation is concluded.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.