Semiconductor optical power receiver
US5342451A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 2, 1992 |
| Grant date | Aug 30, 1994 |
| Priority date | — |
| Expiry date | Mar 2, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
A gallium-arsenide optical power receiver of the type having a pn junction formed over a substrate and buffer layer has a window layer of a first alloy of aluminum gallium arsenide (Al.sub.x Ga.sub.1-x As) and a conductive layer of a second alloy of aluminum gallium arsenide (Al.sub.1-x Ga.sub.x As). Alternatively, the gallium arsenide optical power receiver has a second window layer of the first alloy of aluminum gallium arsenide disposed on the conductive layer, and a cap layer of gallium arsenide disposed on the second window layer. The sheet resistance of the emitter layer is negated by being in parallel with the low sheet resistance of the conductive layer to minimize the thickness and conductivity of the emitter may therefore be optimized solely for energy conversion efficient.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.