High aspect ratio metal microstructures and method for preparing the same
US5342737A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Apr 27, 1992 |
| Grant date | Aug 30, 1994 |
| Priority date | — |
| Expiry date | Apr 27, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12292
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
High aspect ratio metal microstructures may be prepared by a method involving PA0 (i) forming a layer of a photoresist on a substrate; PA0 (ii) exposing the layer to actinic radiation in an imagewise manner and developing the exposed layer to obtain a surface which contains regions having no remaining photoresist and regions covered with photoresist; PA0 (iii) metallizing the surface to form a layer of metal on the region of the surface having no remaining photoresist and on the sides of the regions of photoresist remaining on the surface; and PA0 (iv) optionally, stripping the photoresist remaining on the surface. Such microstructures are useful as electron emitters, anisotropic high dielectric interconnects, masks for x-ray photolithography, carriers for the controlled release of active agents, and ultramicroelectrode arrays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.