Method of growing a semiconductor material by epilaxy
US5342805A · kind A · utility
7Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 1, 1993 |
| Grant date | Aug 30, 1994 |
| Priority date | — |
| Expiry date | Jul 1, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention concerns itself with an improved method of producing sharply defined misfit dislocations; (MD) with a new, inexpensive method of doping these misfit dislocations with Au; with invention that a combination of Au and Pt doping in misfit dislocations is superior to any amount of Au and to some specific placements of the misfit dislocations in the device structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.