Method for crystal growth of beta barium boratean
US5343827A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1992 |
| Grant date | Sep 6, 1994 |
| Priority date | — |
| Expiry date | Feb 19, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growing optical quality beta barium borate; crystals from a pure NaCl fluxed melt. The method comprises maintaining particular thermal field conditions throughout the melt and slowly cooling the melt to cause beta barium borate to crystallize from the melt. The rate of cooling may be at a rate of not greater than 3.degree. C. per day. The method may utilize a seed crystal, suspended into the melt, so that the beta barium borate may crystallize on the seed crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.