Vapor growth apparatus for semiconductor devices
US5344492A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 1993 |
| Grant date | Sep 6, 1994 |
| Priority date | — |
| Expiry date | Jul 21, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4586
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vapor growth apparatus has a susceptor which rotates in a water cooled reaction tube with holding semiconductor susbstrates thereon. A heater is provided in order to heat the susceptor and to maintain a predetermined temperature. This heater is comprised of an inner heater, which heats the inner part of the susceptor, and a peripheral heater, which heats the peripheral part of the susceptor. The peripheral heater is made thicker than the inner heater. In addition, these inner and peripheral heaters are connected in parallel with each other. So, the peripheral heater can generate more heat than the inner heater so as to compensate the temperature decrease in the peripheral part of the susceptor, without loosing the mechanical strength of the whole heater.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.