Turn-off high-power semiconductor component with low inductive housing
US5345096A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 30, 1993 |
| Grant date | Sep 6, 1994 |
| Priority date | — |
| Expiry date | Jul 30, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a turn-off high-power semiconductor component, in particular in the form of a GTO, comprising a disk-shaped semiconductor substrate (2) which is disposed concentrically in an annular insulating housing (10) between a disk-shaped cathode contact (4), to which pressure can be applied, and a disk-shaped anode contact (5), to which pressure can also be applied, and which is contacted on the cathode-contact side by a gate contact (7, 21), the cathode contact (4) being connected to one end of the insulating housing (10) via a first lid (11a) and the anode contact (5) to the other end of the insulating housing (10) via a second lid (11b), an outwardly hermetically sealed component (1) being formed, and the gate contact (7) being capable of being fed with a gate current via a gate lead (8) brought to the outside, a connection to the gate unit is achieved with low mutual inductance with a minimum of alterations compared with conventional components as a result of the gate lead (8) being of rotationally symmetrical design and being disposed concentrically with respect to the cathode contact (4) and of the gate lead (8) being electrically isolated from the cathode contact (4) by a single i…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.