Antiresonant Fabry-Perot p-i-n modulator
US5345454A · kind A · utility
11Cited by
5References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 27, 1993 |
| Grant date | Sep 6, 1994 |
| Priority date | — |
| Expiry date | Jan 27, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/0817
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The advantages of both active and passive modelocking techniques are realized within a single device by providing a p-i-n modulator formed at antiresonance within a Fabry-Perot etalon. The p-i-n modulator actively modulates light within the laser cavity by introducing periodic loss in response to changing voltages applied to the modulator. The p-i-n modulator includes an intrinsic region that is disposed between a p-doped region and an n-doped region. The modelocking performance of the p-i-n modulator is enhanced by the saturable absorber action of the intrinsic region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.