Solar-induced chemical vapor deposition of diamond-type carbon films
US5346729A · kind A · utility
14Cited by
5References
12Claims
0Family size
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Key dates
| Filing date | May 17, 1993 |
| Grant date | Sep 13, 1994 |
| Priority date | — |
| Expiry date | May 17, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S427/103
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An improved chemical vapor deposition method for depositing transparent continuous coatings of sp.sup.3 -bonded diamond-type carbon films, comprising: a) providing a volatile hydrocarbon gas/H.sub.2 reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and b) directing a concentrated solar flux of from about 40 to about 60 watts/cm.sup.2 through said reactant mixture to produce substrate temperatures of about 750.degree. C. to about 950.degree. C. to activate deposition of the film on said substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.