Method of making a selective compositional disordering of a GaAs based heterostructure by the in-diffusion of Au through a single crystal, epitaxially grown Ge film

US5346856A · kind A · utility

Assignee

• The United States of America as represented by the Secretary of the Army · US

Inventors

• Kenneth A. Jones · Brick, US
• Howard S. Lee · San Jose, US

Key dates

• Filing date: May 10, 1993
• Grant date: Sep 13, 1994
• Expiry date: May 10, 2013

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/2059
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method for producing a buried heterostructure active devices and a passive waveguide by providing a heterostructure substrate such as a superlattice having at least one planar GaAs layer and at least one AlGaAs layer adjacent to it. A single crystal germanium layer is epitaxially deposited on the superlattice substrate. A layer of gold is deposited on the germanium layer. The gold and germanium layers are imagewise patterned and selected portions etched away. The patterned substrate is encapsulated in a compatible, heat resistant encapsulating material. The encapsulated substrate is then annealed at a temperature of up to about 350.degree. C.