Multiterminal lateral S-shaped negative differential conductance device
US5347141A · kind A · utility
1Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1993 |
| Grant date | Sep 13, 1994 |
| Priority date | — |
| Expiry date | Nov 9, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/402
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention (or multi-terminal lateral hot-electron transistor, ET) is based on a high electron mobility (hot-electron) transistor with a split-gate arrangement similar to those used in quantum wave guide devices. In the present invention, the depletion below the split gate is used to form, and control, potential barriers between the source and drain contacts. The devices, according to the present invention, exhibit pronounced SNDC which is controlled by the gate bias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.