Thin-layer field-effect transistors with MIS structure whose insulator and semiconductor are made of organic materials
US5347144A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 1993 |
| Grant date | Sep 13, 1994 |
| Priority date | — |
| Expiry date | Mar 1, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/649
Abstract
A thin-layer field-effect transistor (TFT) with an MIS structure includes a thin semiconductor layer between a source and a drain. The thin semiconductor layer is in contact with one surface of a thin layer made of insulating material, and in contact by its other surface with a conducting grid. The semiconductor is composed of at least one polyconjugated organic compound with a specific molecular weight. The polyconjugated organic compound or polyconjugated organic compounds contain at least 8 conjugated bonds and have a molecular weight of no greater than approximately 2,000. The thin layer of insulating material is made of an insulating organic polymer having a dielectric constant of at least equal to 5. The transistor is useful as a switching or amplifying element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.