Photosensitive resin composition for forming polyimide film pattern comprising an o-quinone diazide photosensitive agent
US5348835A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1991 |
| Grant date | Sep 20, 1994 |
| Priority date | — |
| Expiry date | Sep 27, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0233
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a photosensitive resin composition, containing a polyamic acid derivative having a repeating unit represented by general formula (1) given below and a photosensitive agent: ##STR1## where, R.sup.1 represents a tetravalent organic group, R.sup.2 represents a divalent organic group, and R.sup.3 and R.sup.4 represent a monovalent organic group, at least one of R.sup.3 and R.sup.4 being an organic group having at least on hydroxyl group bonded to an aromatic ring. A semiconductor substrate is coated with the photosensitive resin composition, followed by exposing the coated film to light through a patterning mask and subsequently applying a development and a heat treatment so as to form a polyimide film pattern. A baking treatment also be applied immediately after the exposure step. The photosensitive resin composition of the present invention performs the function of a positive or negative photoresist film and the function of a polyimide protective film on a semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.