Patent · US Expired

Material-saving process for fabricating mixed crystals

US5348911A · kind A · utility

74Cited by

9References

13Claims

0Family size

Assignee

Aixtron, Inc. · DE

Inventors

Holger Jurgensen · Aachen, DE
Klaus Gruter · Aachen, DE
Marc Deschler · Hauset, BE
Pieter Balk · Aachen, DE

Key dates

Filing date	Apr 26, 1993
Grant date	Sep 20, 1994
Priority date	—
Expiry date	Apr 26, 2013

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/42
WIPO fieldChemical engineering
WIPO sectorChemistry

Abstract

Disclosed is a process for fabricating mixed crystals and, in particular, III-V semiconductors, in which at least one component of the composition of the mixed crystal is transferred in a reactor from a source into a vapor phase containing hydrogen and chloride compounds as well as a carrier gas and mixed with said component or other components of said composition of said mixed crystal, transported to a substrate and precipitated on said substrate. The invented process is distinguished in that in order to vary the growth rate between approximately 1 <m/h and approximately 500 <m/h, the overall pressure is varied between approximately 80 mbar and approximately 1 mbar.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.