Protection diode for a vertical semiconductor component
US5349232A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1993 |
| Grant date | Sep 20, 1994 |
| Priority date | — |
| Expiry date | Jun 29, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
A high voltage avalanche diode formed in an integrated circuit includes vertical power components. The integrated circuit is formed in an N-type semiconductor substrate. The rear surface of the substrate corresponds to a first main electrode of the power components, whose second main electrodes correspond to regions formed in P-type wells which are formed in the front surface of the substrate. The diode includes a P-type region wound substantially as a spiral that is formed in the front surface of the substrate; non-overlapping N-type regions formed in equal number in each turn of the spiral and forming with the spiral elemental avalanche diodes; metallizations connecting in series the elemental diodes; and a connection between an end of the spiral and the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.