High temperature phosphorus oxide diffusion source
US5350460A · kind A · utility
5Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 1992 |
| Grant date | Sep 27, 1994 |
| Priority date | — |
| Expiry date | Dec 8, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S252/951
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a solid high temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 3 and R is La, Y, Ce, Nd, Eu, Pt, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and to the doped silicon wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.