Low temperature P.sub.2 O.sub.5 oxide diffusion source
US5350461A · kind A · utility
0Cited by
7References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 1992 |
| Grant date | Sep 27, 1994 |
| Priority date | — |
| Expiry date | Dec 8, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S252/951
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a solid low temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 5 and R is Nd, Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and the doped silicon wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.