Ionized cluster beam deposition of sapphire
US5350607A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 1992 |
| Grant date | Sep 27, 1994 |
| Priority date | — |
| Expiry date | Oct 2, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/20
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Sapphire, a highly stable oxide of aluminum having the chemical formula of Al.sub.2 O.sub.3, is placed in a crucible. The crucible is heated to vaporize the sapphire therein. The sapphire vapor is ejected through a nozzle in the crucible and into a region having a vacuum pressure of approximately 10.sup.-5 Torr or less. As the vapor leaves the crucible through the nozzle, atom aggregates or clusters are formed through a supercooled phenomenon due to adiabatic expansion. The vacuum region has disposed therein a substrate comprised of one of various materials, including metals, oxides or silicon. The sapphire vapor is accelerated towards the substrate where it deposits on a surface of the substrate in a uniformly distributed thin layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.