Process for producing a surface gate of an integrated electro-chemical sensor, consisting of a field-effect transistor sensitive to alkaline-earth species and sensor obtained
US5350701A · kind A · utility
13Cited by
3References
10Claims
0Family size
Assignee
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Key dates
| Filing date | May 6, 1993 |
| Grant date | Sep 27, 1994 |
| Priority date | — |
| Expiry date | May 6, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/414
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A process for producing a surface gate comprising a selective membrane for an integrated chemical sensor comprising a field effect transistor, and the integrated chemical sensor thus produced, wherein the surface gate is particularly sensitive to alkaline-earth species, and more particularly, sensitive to the calcium ion. The process comprises forming grafts on the surface gate, and making the grafts operative utilizing phosphonate-based, iono-sensitive molecules.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.