Method of doping a group III-V compound semiconductor
US5350709A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1993 |
| Grant date | Sep 27, 1994 |
| Priority date | — |
| Expiry date | Jun 10, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of doping a Group III-V compound semiconductor with an impurity, wherein after an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed in this order on a crystal of Group III-V compound semiconductor, the sample is subjected to at least one heat treatment to cause silicon in the SiOx film to diffuse into the Group III-V compound semiconductor, thereby forming a doped layer. Using this doped layer forming method, field-effect transistors, diodes, resistive layers, two-dimensional electron gas or one-dimensional quantum wires, zero-dimensional quantum boxes, electron wave interference devices, etc. are fabricated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.