Structure for temperature compensating the inverse saturation current of bipolar transistors
US5350998A · kind A · utility
2Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 23, 1992 |
| Grant date | Sep 27, 1994 |
| Priority date | — |
| Expiry date | Apr 23, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S323/907
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A circuit for temperature compensating the inverse saturation current of a bipolar transistor having a collector region, base and emitter regions defining a base-emitter junction is disclosed. A diode element having substantially said same saturation current is parallel-connected in reverse configuration to said base-emitter junction of the bipolar transistor. If the bipolar transistor is NPN type, the diode has an anode and cathode connected respective to the emitter and base regions of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.