Solid-state imaging device having a light barrier layer
US5351081A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1993 |
| Grant date | Sep 27, 1994 |
| Priority date | — |
| Expiry date | Dec 23, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/153
Abstract
A solid-state imaging device in which a light-barrier layer is formed on transfer electrodes on top of a vertical pixel isolating region by an insulating film. The light-barrier layer is adapted to overlie the lateral sides of the transfer electrodes and the peripheral region of a photosensor region neighboring on the vertical pixel isolating region. By provision of the light-barrier layer, the light incident on the vertical pixel isolating region is stopped to reduce smear charges which might otherwise be intruded into the vertical charge transfer section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.