Semiconductor device having reduced contact resistance between a channel or base layer and a contact layer
US5351128A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1992 |
| Grant date | Sep 27, 1994 |
| Priority date | — |
| Expiry date | Jul 27, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A field-effect transistor or a bipolar transistor may be provided in which the contact resistance between a channel layer or base layer and a contact layer are reduced. For example, an InGaAs buffer layer may be formed on the substrate side of an InGaAs channel layer of a field-effect transistor and by the bypassing effect that carriers pass through this InGaAs buffer layer, the InGaAs channel layer comes in contact with the contact layer with a low resistance. The contact resistance between the InGaAs channel layer and the contact layer can be reduced to 10 ohm per a width of 10.mu.m, and as a result, the value of transconductance factor K of a field-effect transistor can be increased in 14 mA/V.sup.2 per a width of 10.mu.m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.