High Q monolithic MIM capacitor
US5351163A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1992 |
| Grant date | Sep 27, 1994 |
| Priority date | — |
| Expiry date | Dec 30, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/08
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high Q monolithic metal-insulator-metal (MIM) capacitor utilizing a single crystal dielectric material. A dielectric membrane is epitaxially grown on a substrate. The membrane acts as an etch-stop when a backside etch is used to form a cavity in the substrate, resulting in a single crystal dielectric membrane spanning the cavity. Electrodes are formed on opposite surfaces of the membrane at the cavity location. For a shunt capacitor application, the bottom electrode is connected to the backside substrate metallization. For a series capacitor application, the bottom electrode is isolated from the backside metallization, but is connected to the topside circuitry through a via formed in the membrane. The membrane may consist of two dielectric layers, where the first layer is an etchstop material. In one embodiment the substrate and second dielectric layer are gallium arsenide and the first dielectric layer is aluminum gallium arsenide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.