Process for the formation of SiO.sub.2 films
US5352487A · kind A · utility
11Cited by
12References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1992 |
| Grant date | Oct 4, 1994 |
| Priority date | — |
| Expiry date | Aug 31, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/452
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method for the low temperature deposition of SiO.sub.2 in a low pressure chemical vapor deposition system is disclosed. The apparatus makes use of a prereactor to form an activated form of diacetoxyditertiarybutoxysilane (DADBS) from which SiO.sub.2 is deposited. The prereactor may be positioned upstream of an SiO.sub.2 deposition reactor or may be incorporated into the front end thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.