Denuding a semiconductor substrate
US5352615A · kind A · utility
7Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 1994 |
| Grant date | Oct 4, 1994 |
| Priority date | — |
| Expiry date | Jan 24, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/06
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate is denuded using a reducing gas mixture including carbon monoxide and carbon dioxide. Use of the reducing gas mixture allows very low oxygen partial pressure to be achieved in a furnace tube during the step of denuding. Oxygen partial pressure lower than 1E-9 atmosphere may be achieved by adjusting the relative ratio of carbon monoxide and carbon dioxide. Precipitates are grown after forming nucleating sites. Both CZ and FZ substrates may use the process, and the process can be used with silicon, germanium, or other semiconductor materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.