Method for manufacturing a semiconductor device
US5352623A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 15, 1994 |
| Grant date | Oct 4, 1994 |
| Priority date | — |
| Expiry date | Feb 15, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
A method for manufacturing a semiconductor device, wherein a thin film of tantalum oxide is formed as a dielectric film in a capacitor element, increases capacitance per unit area and reduces a leakage current in the capacitor element of DRAM memory cells. The method includes steps of forming a polysilicon film constituting a lower electrode of the capacitor element, removing a natural oxide film from the surface of the polysilicon film, nitriding the surface of the polysilicon by rapid thermal nitriding (RTN) using lamp-annealing, forming a tantalum oxide film, densifying and nitriding consecutively the tantalum oxide film, and forming an upper capacitor electrode thereon. The capacitor element formed by the method has a large capacitance per unit area Cs=13.8 fF/.mu.m.sup.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.