Patent · US Expired

Process for producing storage-stable silicon wafer surfaces having advantageous oxidation properties and silicon wafer fored thereby

US5352637A · kind A · utility

6Cited by

6References

20Claims

0Family size

Assignee

Wacker-Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH · DE

Inventors

Laszlo Fabry · Burghausen, DE
Manfred Grundner · Burghausen, DE
Dieter Graef · Biebertal, DE
Susanne Bauer-Mayer · Burghausen, DE
Peter John · Burghausen, DE

Key dates

Filing date	Oct 14, 1992
Grant date	Oct 4, 1994
Priority date	—
Expiry date	Oct 14, 2012

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/974
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process for producing silicon wafers which have a storage-stable surface and which can be thermally oxidized directly, that is to say, without a prior HF immersion bath, and without the addition of halogen-containing gases, it being possible to achieve an equal or better oxidation result than that achieved by including these measures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.