Programmable semiconductor antifuse structure and method of fabricating
US5353246A · kind A · utility
40Cited by
14References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 1993 |
| Grant date | Oct 4, 1994 |
| Priority date | — |
| Expiry date | Aug 18, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/381
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A programmable semiconductor antifuse structure and method of fabricating are provided which allow for miniaturization of components to an area of less than one micron. The cell exhibits a high pre-programmed resistance of more than 1.times.10.sup.7 ohms and has an extremely low programmed cell resistance of around 50 ohms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.