Plasma immersion ion implantation (PI.sup.3) apparatus
US5354381A · kind A · utility
151Cited by
9References
11Claims
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Key dates
| Filing date | May 7, 1993 |
| Grant date | Oct 11, 1994 |
| Priority date | — |
| Expiry date | May 7, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0044
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Implantation apparatus for cold cathode plasma immersion ion implantation (C.sup.2 PI.sup.3) without a continuous plasma using very short high voltage, low duty cycle ionization pulses, in conjunction with a synchronously produced electron flow to neutralize positively charged wafer surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.