Electron cyclotron resonance apparatus comprising wafer cooling pedestal
US5354382A · kind A · utility
18Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 1994 |
| Grant date | Oct 11, 1994 |
| Priority date | — |
| Expiry date | Feb 7, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2001
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron cyclotron resonance apparatus for treating a wafer by plasma generated by utilizing a resonance of electrons. The apparatus is constructed to improve a temperature uniformity of a wafer by injecting helium as a heat transfer medium between the wafer and a wafer pedestal on which the wafer is laid and thereby transferring a heat from the wafer to the wafer pedestal. The apparatus is also constructed to move a desired wafer treating position. As a result, it is possible to fabricate semiconductor devices having a superior performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.