Monolithic, fully dense silicon carbide material, method of manufacturing and end uses
US5354536A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 3, 1993 |
| Grant date | Oct 11, 1994 |
| Priority date | — |
| Expiry date | Sep 3, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B35/575
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A silicon carbide material is made following a procedure including hot pressing to provide a finished product having a microstructure with an optimal grain size of less than 7 micrometers. The material exhibits a dominant failure mode of intergranular fracture requiring significant energy for crack propagation. The method of manufacturing is cost-effective by allowing the use of "dirty" raw materials since the process causes impurities to segregate at multi-grain boundary junctions to form isolated pockets of impurities which do not affect the structural integrity of the material. End uses include use as protective projectile-resistant armor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.