Contact manufacturing method of a multi-layered metal line structure
US5354713A · kind A · utility
10Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1992 |
| Grant date | Oct 11, 1994 |
| Priority date | — |
| Expiry date | Dec 1, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a manufacturing method of a contact of a multi-layered metal line of a highly integrated semiconductor device. The insulating layer between the metal lines is flattened and step coverage is improved by using a SOG layer or polyimide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.