Semiconductor laser element
US5355384A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1993 |
| Grant date | Oct 11, 1994 |
| Priority date | — |
| Expiry date | Sep 29, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed herein is a semiconductor laser element comprising a first cladding layer, an optical guiding layer, an active layer and a second cladding layer disposed in this order or in reverse order on a semiconductor substrate, a refractive index of the optical guiding layer being larger than both refractive indexes of the first and second cladding layers, and a refractive index of the optical guiding layer is smaller than that of the active layer but larger than that of the first cladding layer, and a burying layer having a refractive index smaller than that of at least one of the first and second cladding layers being disposed on side faces other than laser-emitting faces of the optical guiding layer and the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.