Hetero-epitaxial growth of non-lattice matched semiconductors
US5356509A · kind A · utility
52Cited by
6References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1992 |
| Grant date | Oct 18, 1994 |
| Priority date | — |
| Expiry date | Oct 16, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for growing a compound semiconductor, such as GaAs or InP, on a non-lattice matched substrate, such as Si, utilizes close-spaced vapor transport to deposit nucleation enhancing interlayer and liquid phase epitaxy to form the compound semiconductor. When used in conjunction with a growth mask, the method is also adapted to selective area epitaxy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.