Method for the growing of heteroepitaxial layers
US5356510A · kind A · utility
19Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 6, 1992 |
| Grant date | Oct 18, 1994 |
| Priority date | — |
| Expiry date | Oct 6, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method according to which a layer of a semiconductor material is made on a substrate by growth in a confinement space defined by this substrate and by a confinement layer, this growth being achieved from a seed. The cross-section of the seed, substantially perpendicular to the general direction of growth, possesses a thick central part framed by two thinned lateral parts. The confinement space has the same cross-section as the seed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.