Radiation-sensitive compositions
US5356740A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 20, 1992 |
| Grant date | Oct 18, 1994 |
| Priority date | — |
| Expiry date | Nov 20, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08K5/375
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Radiation-sensitive compositions comprising PA1 (a) a polyester containing structural repeating units of formula (I) ##STR1## wherein Z is a radical of formulae (IIa)-(IIh) ##STR2## wherein Y is a direct bond, C.sub.1 -C.sub.20 alkylene, phenylene, --CH.sub.2 --C.sub.6 H.sub.4 --CH.sub.2 --, cyclopentylene or cyclohexylene, and R.sub.1 and R.sub.2 are each independently of the other hydrogen, methyl or ethyl, with the proviso that R.sub.1 and R.sub.2 are not simultaneously hydrogen, and PA1 (b) a substance that generates acid upon exposure to actinic radiation, form a highly sensitive high resolution positive photoresist formulation which is suitable for DUV lithography and, in particular, for making integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.