Semiconductor device and its manufacturing method
US5356830A · kind A · utility
51Cited by
13References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1990 |
| Grant date | Oct 18, 1994 |
| Priority date | — |
| Expiry date | Dec 17, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and its manufacturing method are provided in which an epitaxial silicon layer is formed by a selective epitaxial growth method over a semiconductor substrate and a polysilicon layer is formed by an ordinary deposition method on the epitaxial silicon layer and these layers and are formed over a semiconductor device in a continuous process within the same furnace for a CVD apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.