Field effect devices having short period superlattice structures using Si and Ge

US5357119A · kind A · utility

Assignee

• The Board of Regents, The University of California · US

Inventors

• Kang L. Wang · Santa Monica, US
• Jin Park · Jeoksang-myeon, KR

Key dates

• Filing date: Feb 19, 1993
• Grant date: Oct 18, 1994
• Expiry date: Feb 19, 2013

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8164

Abstract

Carrier mobility in a heterojunction field effect device is increased by reducing or eliminating alloy scattering. The active channel region of the field effect device uses alternating layers of pure silicon and germanium which form a short period superlattice with the thickness of each layer in the superlattice being no greater than the critical thickness for maintaining a strained heterojunction. The gate contact of the field effect device can comprise quantum Si/Ge wires which provide quantum confinement in the growth plane, thereby allowing the field effect device to further improve the mobility by restricting phonon scattering. The structure can be used to improve device speed performance.