Method of producing single crystal and apparatus therefor
US5357898A · kind A · utility
5Cited by
7References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 1992 |
| Grant date | Oct 25, 1994 |
| Priority date | — |
| Expiry date | Oct 20, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B11/002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In growing an oxide single crystal such as a garnet single crystal or ferrite single crystal by the liquid epitaxial process, the Bridgman process or the like, the melting-out of a platinum or platinum-based alloy-made crucible holding a melt for growing the crystal therefrom is prevented by bringing an electrode in contact with the melt or dipping the electrode into the melt in oxygen, air or an inert gas, applying electric current through the melt between the electrode and the metallic container and controlling the current so as to keep it at nearly zero.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.