Method of protecting aluminum nitride circuit substrates during electroless plating using sol-gel oxide films and article made therefrom
US5358597A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 1993 |
| Grant date | Oct 25, 1994 |
| Priority date | — |
| Expiry date | Aug 10, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2111/00844
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention describes a process for protecting aluminum nitride circuit substrates during electroless plating using a sol-gel technique. The aluminum nitride substrate is coated with a metal. The coated substrate is etched to form a circuit pattern thereby exposing the aluminum nitride. The etched substrate is placed in a solution of tetraethylorthosilicate and withdrawn. The substrate is dried in air and then baked in an oven to remove all of the organic solvents leaving a stoichio metric film of silica on the exposed substrate. The substrate is then placed in an electroless plating solution and the circuit pattern is plated to a predetermined thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.