Hybrid bipolar/field-effect power transistor in group III-V material system
US5359220A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1992 |
| Grant date | Oct 25, 1994 |
| Priority date | — |
| Expiry date | Dec 22, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/121
Abstract
A hybrid power transistor (40) includes a vertical PNP bipolar transistor (42) having a floating base (46). A junction-gate type field-effect transistor (FET) (62) has a lateral N-type channel (64,66) and a vertical electron injection path (54) from the channel (64,66) into the base (46) of the bipolar transistor (42). The FET channel current and thereby the electron injection current are controlled by the FET gate voltage. The injection current conductivity modulates the base (46) and thereby controls the collector current of the bipolar transistor (42). The FET (62) may have a high electron mobility transistor (HEMT), junction-gate field-effect transistor (JFET) or metal-semiconductor field-effect transistor (MESFET) structure. The FET (62) does not require a gate insulating layer, enabling fabrication of the hybrid transistor (40) in the group III-V material system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.