Method for manufacturing a component with porous silicon

US5360759A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Reinhard Stengl · Stadtbergen, DE
• Wolfgang Hoenlein · Unterhaching, DE
• Volker Lehmann · Hersbruck, DE
• Andreas Spitzer · Ottobrunn, DE

Key dates

• Filing date: Sep 17, 1993
• Grant date: Nov 1, 1994
• Expiry date: Sep 17, 2013

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/96
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

For manufacturing a component with porous silicon, two highly doped regions with a lightly doped region arranged between them are formed in a silicon wafer. The dopant concentrations are thereby set such that porous silicon arises in the lightly doped region in a subsequent anodic etching. Light-emitting diodes or light-controlled bipolar transistors can be manufactured in this way.