Vapor phase epitaxial growth method of a compound semiconductor
US5360760A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 30, 1993 |
| Grant date | Nov 1, 1994 |
| Priority date | — |
| Expiry date | Mar 30, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vapor phase epitaxial growth method of a compound semiconductor is provided. On a semiconductor substrate held by a holder, a first epitaxial layer is grown using a first growth gas and then, a separator gas is emitted to the vicinity of the substrate to separate the substrate from the first growth gas. After the separator gas is removed from the vicinity, a second growth gas is supplied to the vicinity to form a second epitaxial layer on the first epitaxial layer. Since the substrate is separated by the separator gas from the first growth gas, transition regions of crystal composition and carrier concentration are difficult to be generated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.