Monolithic circuit fabrication method
US5361967A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 1993 |
| Grant date | Nov 8, 1994 |
| Priority date | — |
| Expiry date | Nov 10, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49171
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A monolithic circuit, such as a piezoelectric device, semiconductor, or the like, may be fabricated by forming an operational metallization layer (12) on a substrate (10). A subsequent layer (40), such as a sealing ring pattern (42) may then be applied using a thin film deposition technique. A thin film material is applied through a mask assembly (28). The mask assembly (28) includes a mask material (30) that has been applied to a screen (24) and patterned as desired. The mask material (30) extends beyond the screen (24) so that only the mask material contacts the substrate (10) during thin film deposition. Preferably, the screen (24) is woven from individual wires (26) having circular cross-sectional shapes. The subsequent layer (40) is applied both through perforations (18) in the screen (24) and under the screen's wires (26).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.