Positive resist pattern formation through focused ion beam exposure and surface barrier silylation
US5362606A · kind A · utility
63Cited by
2References
11Claims
0Family size
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Key dates
| Filing date | Aug 7, 1992 |
| Grant date | Nov 8, 1994 |
| Priority date | — |
| Expiry date | Aug 7, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/265
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist exposed to a micron or sub-micron pattern of highly absorbed ion beams forms a highly crosslinked barrier layer in the exposed regions of the resist surface. The complementary surface regions are silylated in a silicon-containing reagent, and the exposed regions are then removed by a plasma etch. Pattern definition is enhanced by limiting the exposure and the silylation to the surface of the resist. The process allows feature definition below 1000 Angstroms using a relatively inexpensive single element low energy ion source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.