Method of producing a mesa embedded type optical semiconductor device including an embedded layer at its side wall
US5362674A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 2, 1991 |
| Grant date | Nov 8, 1994 |
| Priority date | — |
| Expiry date | Aug 2, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of producing a mesa embedded optical semiconductor device includes the following steps. A multilayer semiconductor structure is formed which includes a laser active layer and an adjoining layer, on a substrate. The multilayer semiconductor structure is selectively etched to form a mesa structure and expose a first planar surface around a root of the mesa structure. The mesa structure is formed to have a second planar surface which is orthogonal to a side wall of the mesa structure and is lower than a top surface of the mesa structure, and a planar side wall formed by a side wall of the laser active layer and a side wall of the adjoining layer. An embedded layer is formed, by vapor growth deposition, at the first planar surface, the second planar surface, and the planar side wall of the mesa structure, such that the embedded layer is free of voids.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.