Method for producing single crystal superconducting LnA.sub.2 Cu.sub.3 O.sub.7-x films
US5362711A · kind A · utility
3Cited by
3References
14Claims
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Key dates
| Filing date | Apr 27, 1993 |
| Grant date | Nov 8, 1994 |
| Priority date | — |
| Expiry date | Apr 27, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/732
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for forming a single crystal superconducting LnA.sub.2 Cu.sub.3 O.sub.7-x film, wherein Ln is at least one rare earth element and A is at least one alkaline earth element, is disclosed, which comprises simultaneously evaporating Ln, A and Cu in an atomic ratio of about 1:2:3 from discrete evaporation sources of Ln, A and Cu onto a heated substrate in a vacuum vessel while blowing an oxygen gas onto the substrate to form an oxygen-containing atmosphere, thereby forming the single crystal superconducting film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.